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Samsung launches its first memory module DDR4 TSV 128GB

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    Silver Member vinisouz's Avatar
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    Default Samsung launches its first memory module DDR4 TSV 128GB

    According to Samsung, TSV GB DDR4 module 128 consists of a total of 144 chips distributed in DDR DRAM 36 4 GB packets. Each of these sets, in turn, has four pieces of 8 gigabits to 20 nanometers mounted with TSV packaging technology (acronym for "via through silicon").

    Instead of being welded, the packages made with this technique contain rows of chips that are sanded to be with few micrometers thick and receive fine holes which serve as electrodes passage. Thus, the module now has a large increase in signal transmission, which allows them to offer a solution with low power consumption for next-generation servers with speeds up to 2,400 Mbps.

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    Samsung is responding to growing demand for ultra-high capacity DRAM by accelerating production of TSV technology in the market and quickly ramping up 20nm 8Gb DRAM chips to improve manufacturing productivity. In solidifying its technology leadership and expanding the market for premium memory solutions, the company plans to provide a complete lineup of its new high-performance TSV DRAM modules within the next several weeks including 128GB load reduced DIMMs (LRDIMMs).

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