The development of germanium transistor opened the door to numerous electronic applications that are currently in our daily life.*Between*1950*and the early years of the 70s, the electronics was primarily responsible for the growing demand for germanium, until replaced by*silicon*with superior electrical properties.*Currently, much consumption is destined for the production of optical fibers (about half), night vision equipment and as a catalyst in the polymerization of plastics, although there are studies to replace it with more economical catalysts.
The gallium arsenide is obtained in the form of slides, from the combination of chemical constituents,*arsenic*and*gallium*, and allows, according to*the Siemens Magazine*, the fabrication of*chips*fastest in the world, which, although more expensive than the substrate using only*silicon*, are much faster transmission of information, and enables a significant reduction in the sizes of equipment.
Benefits for Computers Hardware.
a) The main advantage of silicon germanium technology over its rival is its compatibility with leading CMOS processing.*This provides enormous economic benefits since mature CMOS integrated circuit is the cost leader in the industry.*In addition silicon germanium provides ultra capacity high frequency (more than 100GHz) on identical silicon platform where baseband functions, memory and digital signal processing can also be integrated.*

b) The prevailing trend in RF and mixed-signal applications is toward a highly integrated system-on -a-chip (SoC), where many of the discrete components are integrated into a single piece of silicon - as a single chip - with improved earnings performance, efficiency and economy.*This is the rationale for the rise of silicon germanium technology, and is why appears prominently on the technology roadmaps around the world.*

An alloy, silicon-germanium, enables faster, more efficient devices to be produced using smaller, less noisy circuits than conventional silicon permits.*It extends the battery life of portable devices while consuming less energy and reduces costs wireless RFIC solutions through greater integration of components on the chip.*


Since the discovery of the properties of semiconductors and their application in electronics, the life of modern man was and still is the subject of numerous innovations, aiming to facilitate comfort and well being.*With the creation of transistors (more classical application of semiconductors), it was possible to facilitate communication, data processing, the more accurate diagnosis of diseases, space travel, transport through increasingly rapid and safe addition to managing the fantastic world of entertainment and fun.*However, over the decades since the advent of semiconductor back in 1940, the modern world has been streamlined into a frightening speed.*Currently it is necessary that certain information is simultaneously in several places in the world, diagnostic imaging are the eyes of doctors inside the human body, with a clarity of image that far outweighs the traditional radiographs.*Computers now increasingly powerful processors require fast, accurate and have ability to operate in cycles with increasingly faster data processing capability that surpasses the gigabytes.*The growth of cities, major infrastructure need to be augmented as the electricity.*Large electric power generating plants are demanding power electronics with large-capacity switching current and voltage as well as high reliability and low operating cost.*This growing need to quickly and accurately find ourselves limited by the characteristics of semiconductors currently used.*So, is developing effective ways of applying other semiconductor materials, which aim precisely meet the application requirements of electronic equipment in various applications.*Focusing on a particular material, gallium arsenide, this research demonstrates the technical characteristics, mode of obtaining and applying increasingly common in microprocessors and microcontrollers, as well as a comparison between the traditional semiconductor silicon and germanium.